RamTrend

RAM market intelligence

Live RAM price charts, deals, and news signals.

Track DDR3, DDR4, and DDR5 pricing against historical context, then jump to the segments and listings that matter.

Price trend

DDR3-1600 2x4GB

WaitMedian normalized price$41.14+19.3%Live
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Memory news intelligence

Latest memory-market news, ranked by price impact.Memory news

Published RamTrend notes connect supplier moves, AI demand, product launches, shortages, and retail behavior to likely DRAM, NAND, and RAM price pressure.

Counterpoint data cited by TechPowerUp shows NAND contract prices rising 55% quarter over quarter in the second quarter of 2026. The market's revenue growth came largely from pricing rather than shipment expansion.

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Global NAND revenue increased 70% in the second quarter of 2026 after a 90% increase in the first quarter, according to Counterpoint Research data cited by TechPowerUp. The source attributes the expansion primarily to higher pricing, with NAND contract prices rising 55% sequentially during the quarter. Samsung led the market with 28% revenue share, followed by SK hynix at 19% and Micron at 15%, while YMTC reached 14%. The report links the tight market to AI infrastructure demand for high-capacity enterprise flash, which has encouraged suppliers to prioritize higher-margin data-center products over client SSD capacity. The market-share figures are revenue-based and should not be interpreted as shipment shares.

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SamsungSK hynixMicronYMTCNAND Flashenterprise SSDclient SSD
Source: TechPowerUp News

StorageReview found that one 245TB Micron 6600 ION SSD could replace eight nearline hard drives while using less power under sequential writes than the disk array used at idle. The density shift could free substantial power and rack capacity for AI compute.

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Micron's 6600 ION places 245TB of QLC NAND in one enterprise SSD, and StorageReview's analysis frames its value around data-center power and floor space rather than raw capacity alone. In the publication's test configuration, one drive replaced eight 30TB nearline hard drives. The SSD system consumed 170.2W during sequential writes, compared with 173.5W for the hard-drive configuration at idle. StorageReview estimates that replacing disk with flash at exabyte scale could reduce a best-case footprint from 22 racks to six and free enough power from fewer than three racks of drives to operate a GB200 NVL72. The figures are workload-specific lab measurements, but they illustrate why ultra-dense QLC flash is becoming an AI-infrastructure planning tool.

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MicronQLC NANDenterprise SSDPCIe Gen5AI data centers
Source: StorageReview

Nvidia is investing $3.5 billion in MediaTek and extending their work through the NVLink Fusion ecosystem. The partnership could make Nvidia's scale-up fabric and NVHBM technology available to MediaTek's ASIC customers.

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Nvidia has announced a $3.5 billion investment in MediaTek and a deeper collaboration around NVLink Fusion, according to TechPowerUp. MediaTek already designed the GB10 system-on-chip used in Nvidia's RTX Spark and DGX Spark systems. Under the expanded relationship, MediaTek plans to offer NVLink Fusion to its ASIC customers, allowing non-Nvidia processors and accelerators to connect to the scale-up fabric through copper or photonic interconnects. TechPowerUp also reports that the arrangement will include access to Nvidia's NVHBM architecture, which places the memory controller in the HBM stack. The collaboration broadens the potential market for custom XPU designs that use Nvidia interconnect and memory technology.

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NvidiaMediaTekNVLink FusionNVHBMHBM4ENVLink-C2C
Source: TechPowerUp News

XCENA's MX1 concept combines up to 2TB of DDR5, SSD-backed capacity, and more than 1,000 RISC-V cores in one CXL Type 3 device. The architecture targets data-intensive AI and analytics work by moving processing closer to memory.

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XCENA presented its MX1 memory-centric computing architecture at Hot Chips 2026, according to StorageNewsletter. The company describes a single CXL Type 3 device that combines up to 2TB of DDR5 memory, SSD-backed capacity, and more than 1,000 RISC-V cores. In selected data-analytics kernels, XCENA reported up to 4.7 times the throughput and 18.7 times the energy efficiency of host-CPU processing over CXL. The design aims to reduce data movement between processors and large memory pools, a growing constraint in AI infrastructure. The performance figures are vendor benchmarks on selected workloads, not broad system measurements.

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XCENACXL Type 3DDR5RISC-Vnear-memory computing
Source: StorageNewsletter

CXMT accounted for 10% of global DRAM revenue in the second quarter of 2026, according to Counterpoint Research data cited by TechPowerUp. The gain would place the Chinese manufacturer closer to the established leaders despite restrictions on advanced equipment.

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CXMT reached a 10% share of global DRAM revenue in the second quarter of 2026, according to Counterpoint Research figures cited by TechPowerUp. The report says this was up from 8% in the first quarter and represented a substantial increase from a year earlier. Samsung remained the largest supplier at 38%, followed by SK hynix at 25% and Micron at 24%, while Nanya held 2%. The figures point to CXMT gaining commercial traction during a strong memory cycle even as the company faces more limited access to advanced manufacturing equipment than the three largest global suppliers. Market-share estimates should be read as revenue share, not as a direct measure of shipment volume or technology parity.

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CXMTSamsungSK hynixMicronDRAM
Source: TechPowerUp News

SK hynix argues that inference and agentic AI increasingly depend on where data resides and how quickly it reaches compute. Longer contexts and repeated retrieval make memory bandwidth and latency central system constraints.

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SK hynix says the bottleneck in AI is moving beyond headline GPU throughput toward the movement of data between memory and compute. In a company-hosted article by KAIST professor Hoi-Jun Yoo, the shift from training toward low-latency inference and agentic workloads is described as increasing repeated memory accesses and the need to retain longer contexts. The analysis argues that accelerator performance cannot be realized when required data arrives too slowly, reviving the long-standing memory-wall problem. It is a technology perspective rather than a product announcement, but it reinforces why HBM, memory hierarchy, data locality, and efficient interconnects are becoming strategic parts of AI infrastructure.

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SK hynixHBMDRAMCXLAI inference
Source: SK hynix Newsroom

Kioxia's CM9-R uses eighth-generation BiCS flash in a 15.36TB E3.S enterprise SSD. StorageReview measured strong low-queue-depth performance, a key metric for latency-sensitive data-center workloads.

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Kioxia's CM9-R is the company's first enterprise SSD family based on eighth-generation BiCS flash, according to StorageReview. The reviewed 15.36TB E3.S model delivered up to 3.4 million random-read IOPS and 14.8 GB/s sequential-read performance while carrying a typical active power rating of 25W. Enterprise Gen5 SSDs are increasingly judged not only by peak throughput but also by how much of that performance they retain at low queue depths, where many real data-center applications operate. The product is a technology and performance update rather than a new market-wide supply or price signal.

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KioxiaBiCS8NAND Flashenterprise SSDPCIe Gen5
Source: StorageReview

Samsung says HBM5 should double HBM4E performance and improve performance per watt by 20%. Reaching the target may require a much wider interface, faster signaling, or both.

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Samsung has outlined a performance goal of roughly 4 TB/s for each HBM5 stack in the 2028-2029 period, according to Tom's Hardware. The company expects the generation to deliver twice the performance of HBM4E and a 20% improvement in performance per watt. Samsung has also discussed a heat-path block intended to lower thermal resistance by 20%. The final JEDEC interface is not established in the source. Tom's Hardware calculates that the bandwidth target could require doubling the 2,048-bit HBM4 interface, increasing per-pin transfer rates, or combining both changes. If accelerators eventually carry 20 to 24 stacks, aggregate bandwidth could approach 80 to 96 TB/s, but those package configurations remain roadmap projections.

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SamsungHBM5HBM4EHBMadvanced packaging
Source: Tom's Hardware

An increased HBM stack-height allowance lets HBM4 continue using microbumps, pushing broad adoption of hybrid bonding toward HBM4E and HBM5. The delay gives packaging suppliers more time to improve fine-pitch placement, cleanliness, and yield.

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Hybrid bonding is advancing in logic products, but its expected entry into high-bandwidth memory has moved later. Tom's Hardware reports that a JEDEC decision to permit taller HBM stacks allows HBM4 to retain established microbump connections, leaving HBM4E and HBM5 as the likely first major memory generations to adopt direct copper bonding near the end of the decade. Hybrid bonding can provide much denser vertical connections and reduce stack height, but HBM requires die-to-wafer placement of known-good memory dies. That process is slower and especially sensitive to alignment, surface flatness, and contamination. The revised schedule reduces immediate manufacturing risk for HBM4 while preserving hybrid bonding as an important packaging transition for later stacks.

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SamsungSK hynixMicronTSMCHBM4HBM4EHBM5hybrid bonding
Source: Tom's Hardware

Cerebras says its planned CS-6 generation will place DRAM above its logic-and-SRAM wafer. The design would give the company's wafer-scale architecture more memory without surrendering additional compute area.

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Cerebras presented a two-generation accelerator roadmap at Hot Chips 2026 that includes its first attempt to stack DRAM over a wafer-scale processor. The company says the CS-6 system's engine will combine a logic-and-SRAM wafer with vertically integrated DRAM, addressing capacity pressure from larger AI models and longer inference contexts. Cerebras currently fills the wafer area with compute and on-chip memory, so adding capacity within the same plane would displace other resources. Moving DRAM into a stacked structure could ease that constraint and reduce the area required by the overall design. The product remains two generations away, and the source does not identify a memory supplier or production schedule.

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Cerebrasstacked DRAMSRAMwafer-scale accelerators3D packaging
Source: Tom's Hardware
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Current market cards

Price now vs historical context.Prices in context

DDR3Buy

DDR3-1600 2x16GB

$125-7.5%
Low $48.96High $321
DDR3Wait

DDR3-1600 2x4GB

$41.14+19.3%
Low $28.84High $69.16
DDR3Buy

DDR3-1600 2x8GB

$59.28-0.2%
Low $56.30High $81.40
DDR4Watch

DDR4-3000 2x16GB

$250+4.8%
Low $54.00High $318
DDR4Wait

DDR4-3200 2x16GB

$306+11.8%
Low $60.00High $306
DDR4Wait

DDR4-3200 2x32GB

$690+23.1%
Low $108High $735
DDR4Wait

DDR4-3200 2x8GB

$194+17.9%
Low $39.30High $194
DDR4Buy

DDR4-3600 2x16GB

$210+0.1%
Low $66.00High $1,400

Best Value Kits

Deal Radar

DDR4-3200 2x8GBMicron 8GB PC4-25600 (DDR4-3200) Memory (MTA8ATF1G64HZ3G2J1) SODI.. Laptop RAMmikesstuffforsale
$49.98Normalized 2×8GBLot 1×8GB: $24.9974% below median
DDR4-3200 2x8GBSK Hynix 8GB 1Rx16 PC4-3200AA-SC0-13 Laptop Memory | Tested & Workingagtdalecooper
$54.00Normalized 2×8GBLot 1×8GB: $27.0072% below median
DDR4-3200 2x8GBMajor Brand 8 GB DDR4-3200 PC4-25600 1Rx16 1.2V SO-DIMM Laptop RAMtrreusegroup
$55.98Normalized 2×8GBLot 1×8GB: $27.9971% below median
DDR4-3200 2x8GBKingston 8GB 1Rx16 PC4-3200AA-SCO-12 99957-008.A00G SODIMM ** FREE SHIPPING **kev101vek
$56.00Normalized 2×8GBLot 1×8GB: $28.0071% below median
DDR4-3200 2x8GBSamsung 8GB 1Rx8 PC4-3200AA-SA1-11 Laptop Memory P/N: M471A1K43EB1-CWE Testedminnesotacomputers
$57.98Normalized 2×8GBLot 1×8GB: $28.9970% below median
DDR4-3200 2x8GBSK hynix HMA81GS6CJR8N-XN 8GB 1Rx8 DDR4 SO-DIMM PC4-3200AA 260-Pin Laptop Memorytkaykotech2020
$57.98Normalized 2×8GBLot 1×8GB: $28.9970% below median
DDR3-1600 2x4GB16GB 4x4GB PC3-12800U Dell OptiPlex 7010 7020 9010 9020 990 980 790 Ram Memoryjuluplus
$12.50Normalized 2×4GBLot 4×4GB: $24.9970% below median
DDR4-3200 2x8GBMicron MTA8ATF1G64HZ-3G2J1 8 GB DDR4-3200 PC4-3200AA 260-Pin Laptop Memory Ramlakemichigancomputers
$59.90Normalized 2×8GBLot 1×8GB: $29.9569% below median
DDR4-3200 2x8GBSamsung 16GB (2x8GB) DDR4 PC4-3200AA Laptop RAM - Excellent Condition!!!eatchovegies
$60.00Normalized 2×8GBLot 2×8GB: $60.0069% below median
DDR4-3200 2x8GBSK Hynix 8GB PC4-25600 (DDR4-3200) SO-DIMM Memory Module HMA81GS6DJR8N-XNitad_resale
$60.00Normalized 2×8GBLot 1×8GB: $30.0069% below median
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