Samsung Electronics announced that it has begun mass production of HBM4 and shipped commercial products to customers. The company says the new HBM generation uses its 1c DRAM process and a 4nm logic process, with the goal of improving performance, efficiency, and production readiness for AI computing platforms. The specifications in the source point to a meaningful step beyond HBM3E. Samsung lists 11.7Gbps processing speed, potential enhancement up to 13Gbps, and up to 3.3TB/s bandwidth per stack. It also describes 12-layer products ranging from 24GB to 36GB, with 16-layer versions planned to expand capacity up to 48GB. For RamTrend, this is a high-importance memory-market signal because HBM4 sits directly in the bottleneck between advanced AI accelerators and available memory bandwidth. Samsung also says it expects HBM sales to more than triple in 2026 versus 2025 and is expanding HBM4 production capacity. That points to continued supplier focus on premium HBM output rather than commodity DRAM alone. The price impact is likely upward for advanced AI memory segments. More HBM4 capacity can improve supply over time, but near-term demand from GPU manufacturers and hyperscalers may absorb output quickly. If leading-edge DRAM capacity and packaging resources continue shifting toward HBM, conventional DRAM availability could face indirect pressure.
HBM · May 4, 2026
Samsung Begins Commercial HBM4 Shipments for AI Computing
Samsung says it has started mass production and customer shipments of HBM4, using its 1c DRAM process and advanced logic integration. The move strengthens Samsung's position in the AI memory race as suppliers compete to serve GPU makers and hyperscalers.
Price impact: 7Direction: upSource: Samsung Global Newsroom Semiconductors
SamsungHBM4HBM4EHBM3EDRAMAdvanced PackagingAI Infrastructure
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