RamTrend

AI Memory · Oct 28, 2026

TetraMem sends a 12nm resistive-memory AI chip design to fabrication

The MLX300 combines multi-level RRAM with analog in-memory computing for on-chip AI workloads, according to EE Times Asia.

Price impact: 0Direction: neutralSource: EE Times Asia

TetraMem has completed the tape-out of its MLX300, a 12nm system-on-chip that uses multi-level resistive RAM for analog in-memory computing. EE Times Asia says the design targets audio, vision, and language tasks, with energy efficiency as a goal. Tape-out marks a manufacturing milestone; the supplied report does not include measured performance, production timing, or commercial availability.

TetraMemRRAManalog in-memory computing12nm
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