Micron outlines G11 NAND with more than 400 layers and a 2027 ramp target

Micron's October 21 technology-webinar materials place G11 after G9 in its NAND roadmap. The presentation describes wafer-to-wafer bonding and more than 400 layers, with projected bit density around twice that of G9, I/O performance up to 1.5 times higher, and over 25% less energy per transferred bit. Micron's roadmap sets a second-half 2027 target for volume production. These are company roadmap targets, not current shipping specifications.