Micron maps wafer bonding and High-NA EUV into its DRAM roadmap

Micron has moved away from its previously explored 4F² cell approach and is pursuing other ways to continue increasing DRAM density, according to Tom’s Hardware’s account of the company’s roadmap. The report says wafer bonding is planned for the forthcoming 1ε process, with High-NA EUV lithography intended for a later generation. It also describes development work on vertically integrated HBM and memory for edge inference positioned directly over processors. Micron said its 1γ process is already in volume production and expects 1δ manufacturing to begin in the second half of 2027, with a projected bit-density improvement in the mid-20% range. These are company roadmap plans and stated targets, not independently verified future results.