Micron Targets G11 NAND After Skipping an Intermediate Generation

Micron plans to move from its shipping G9 3D NAND directly to Generation 11, according to a report on the company's technology webinar. Micron says G11 is designed for twice G9's bit density, up to 1.5 times the I/O speed and 25% less energy per bit transferred. G9 uses 276 layers; Micron says G11 will exceed 400 layers and is scheduled to ramp in the second half of 2027 using wafer-on-wafer bonding. The company described the generation jump as a way to deliver capacity, speed and efficiency improvements sooner. These are roadmap claims, not current product specifications.