CXMT targets year-end 2026 for next-generation 4F2 DRAM production

DigiTimes says ChangXin Memory Technologies intends to start mass-producing next-generation 4F2 DRAM by the end of 2026. The report frames the schedule as potentially earlier than moves by Samsung Electronics and SK hynix, while noting that claims about China's technology position have fueled speculation. The source does not provide production capacity, yields or product specifications, so the announcement does not establish how quickly CXMT could compete at scale.