Samsung and SK hynix pursue different paths toward sub-10nm DRAM

Samsung Electronics and SK hynix are preparing to take DRAM production below the 10nm threshold in 2028, according to DigiTimes Daily. The report says the two companies are pursuing different cell structures as traditional scaling techniques become more difficult. DRAM cell design is central to future density, yield, power, and cost improvements. Diverging technical approaches could shape how each supplier manages the trade-offs required for the next generation of memory manufacturing. The report does not describe the cell designs, expected yields, capacity, or production ramp schedules. It is nevertheless an early indicator that both companies are planning a major technology transition for the next phase of DRAM scaling.