RamTrend

AI Memory · Sep 2, 2026

Leading DRAM Makers Point to 3D Stacking Beyond Today's HBM

Samsung, SK hynix and Micron say vertical integration and wafer bonding will be needed to overcome bandwidth and power limits in interposer-based memory systems.

Price impact: 2Direction: upSource: DigiTimes Daily

Executives from the three largest DRAM suppliers used Semicon Taiwan 2026 to describe a transition beyond conventional 2.5D HBM packaging. DigiTimes reports that Samsung, SK hynix and Micron see 3D vertical stacking as a route to shorter data paths and lower transmission power. Moving to wafer-level bonding could improve AI-memory efficiency, while raising manufacturing complexity and capital requirements.

SamsungSK hynixMicronDRAMHBM3D stackingwafer bonding
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