Nanya Expands Fab5A With Multi-Year EUV DRAM Investment

Nanya said its board approved a multi-year investment program for Fab5A running from 2026 through 2029, with spending of up to NT$346.6 billion. The project spans 1b through 1e 10 nm-class DRAM nodes and introduces EUV lithography. The company also raised its 2026 capital expenditure budget to NT$69.7 billion, with the additional allocation aimed at equipment prepayments to keep the project on schedule. According to the roadmap described in the source, wafer output is expected to begin in the second half of 2027, rise to 30,000 wafers per month in 2028, and reach 35,900 wafers per month in 2029, with longer-term capacity planned at about 45,000 wafers per month. Nanya also said 1c pilot production has started and that 1d is moving toward pilot production. For the memory market, the announcement points to a larger long-range DRAM supply base rather than an immediate shift in available output. Near-term pricing remains supported by the recent strength in DRAM, especially DDR4, but the scale of this expansion indicates Nanya is positioning for more advanced process competition and higher future supply flexibility.