Samsung sketches a stacked-memory roadmap for AI systems

The roadmap is important because Samsung is linking future AI performance to vertical memory integration, not only faster standalone HBM stacks. Its zHBM concept places memory above the accelerator, while zNAND-O targets a new flash layer for AI data movement. Samsung also presented V10 BV-NAND with more than 400 layers enabled by wafer bonding. These are roadmap technologies rather than current volume products, but they show where Samsung wants to compete as HBM, NAND density, and advanced packaging converge around AI workloads.