Emerging Embedded NVM Options Gain Ground Beyond 28nm Nodes

A new review of nonvolatile memory development points to MRAM and RRAM as the leading successors to embedded flash on newer process nodes, while PCRAM appears to be losing momentum. The article also highlights renewed work on FeRAM and an early-stage UltraRAM design from Quinas that aims at longer-term competition with DRAM-class memory. For the memory market, the main takeaway is architectural rather than immediate volume disruption. Foundries and chip designers are increasingly treating MRAM and RRAM as practical embedded options for MCUs, automotive systems, industrial devices, and edge AI hardware, especially where endurance, power, or scaling limits make embedded flash less attractive. The piece also notes ongoing supply pressure across HBM, DRAM, and NAND, which is helping alternative embedded memory approaches attract attention. Even so, standalone NAND keeps a strong cost advantage, and the more ambitious technologies discussed here remain far from reshaping mainstream commodity memory pricing in the near term.