RamTrend

HBM · Jul 10, 2026

Sideways HBM research targets AI memory's thermal ceiling

Tom's Hardware reports that researchers in Korea and Japan have proposed sideways-stacked DRAM designs that could improve cooling, bandwidth, and capacity for future AI memory.

Price impact: 1Direction: upSource: Tom's Hardware

The reported V-Die and MOSAIC concepts point at a real constraint in HBM scaling: heat removal becomes harder as stacks grow denser and bandwidth rises. These designs are research-stage rather than near-term production plans, so they should not be treated as a capacity forecast. Still, they are relevant for the HBM roadmap because alternatives to TSV-heavy vertical stacks could influence how suppliers attack performance and thermals after current HBM3E and HBM4 generations.

SamsungSK hynixMicronHBMHBM3EHBM4DRAMV-DieMOSAICadvanced packaging
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