SK hynix Sends 12-High HBM4E Samples to Customers Ahead of Volume Ramp

SK hynix announced that it has delivered samples of its 12-layer HBM4E to major customers. According to the company, the part reaches 16Gbps per pin, improves power efficiency by more than 20% versus the previous model, and uses advanced MR-MUF packaging to cut heat resistance by 17% while supporting a 48GB 12-stack design. The announcement points to continued momentum in high-bandwidth memory for AI training and inference systems. If customer qualification proceeds smoothly and mass production follows on schedule, the product could strengthen SK hynix's position in the premium HBM segment, where supply discipline and performance leadership can support firm pricing.