SK hynix has announced sample shipments of a 12-high HBM4E stack to key customers, signaling another step in the race to supply memory for AI accelerators. According to the company, the product reaches up to 16Gbps per pin and is designed to improve both performance and power efficiency versus earlier generations. The company also said it is using its Advanced MR-MUF packaging approach to lower heat resistance by 17% while improving stability. Those thermal gains are important in high-bandwidth memory, where packaging and cooling constraints can limit usable performance in dense AI systems. For the memory market, the announcement reinforces that HBM remains one of the strongest segments in the industry. Sample shipments do not guarantee immediate volume revenue, but they do indicate continued customer engagement and could support firm pricing conditions in advanced AI memory if qualification proceeds smoothly.
AI Infrastructure · Jun 17, 2026
SK hynix Sends 12-High HBM4E Samples to Customers Ahead of Next AI Memory Cycle
SK hynix says it has begun shipping sample units of its 12-layer HBM4E to major customers. The move matters because faster, more thermally efficient HBM can influence the timing and pricing of next-generation AI server deployments.
Price impact: 6Direction: upSource: PR Newswire Computer Electronics
SK hynixHBM4EHBM4Advanced MR-MUFAI memory
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