SK Hynix Prepares Dalian NAND Ramp for AI eSSD Demand

DigiTimes reports that SK Hynix is preparing a new 200-layer-class NAND generation at its Dalian Phase 2 site in China. The technology is described as using floating-gate architecture, with the target market focused on enterprise SSDs for AI data centers. The move is strategically important because AI storage demand is becoming a clearer NAND growth driver alongside HBM-led DRAM strength. Enterprise SSDs require high-capacity NAND, controller integration, validation, and sustained supply, so a Dalian ramp would strengthen SK Hynix's ability to compete in the AI infrastructure storage cycle. The pricing effect is mixed. New capacity can eventually add supply, but the reason for the ramp is strong eSSD demand. Near term, the article reinforces a constructive demand signal for NAND and enterprise SSDs rather than an immediate easing signal.