Samsung starts HBM4E sample shipments to major customers

Samsung's announcement is a significant AI memory roadmap signal. The company says the 12-layer HBM4E sample has 48GB capacity, pin speed at 14Gbps with scalability to 16Gbps, and bandwidth up to 3.6TB/s per stack. Samsung also says it plans 32GB 8-layer and 64GB 16-layer versions depending on customer needs, and that mass production will be aligned with customer schedules after sample optimization. The product combines Samsung's 1c DRAM process with a 4nm logic base die, and the company highlights improved power efficiency, thermal behavior, and yield compared with the prior generation.